On Tuesday (25), Micron announced its new DDR5 RAM featuring 9,200 MT/s speeds, built on the 1γ (1-gamma) process. This delivers extreme performance and low power consumption and sets a new industry standard in semiconductor manufacturing.
Compared to the previous generation, Micron’s new DDR5 chips offer:
- 9,200 MT/s speeds, significantly surpassing the current DDR5 average
- 20% lower power consumption, improving energy efficiency.
- 30% higher bit density, meaning more data storage in the same space.
Micron Adopts EUV Lithography for DRAM
This launch also marks Micron’s first Extreme Ultraviolet (EUV) lithography use in DRAM production. While Samsung and SK Hynix adopted EUV earlier, Micron’s transition to this advanced technology will allow it to manufacture smaller, more efficient, and cost-effective chips—a shift that is expected to significantly impact the semiconductor industry in the coming years.
Efficiency and performance of the new DDR5-9200 memories
Micron’s new DDR5-9200 memory modules are built using 16GB (2GB) chips and operate at a standard voltage of 1.1V. The combination of higher energy efficiency and increased bit density allows Micron to produce more chips per silicon wafer, which should eventually lead to lower production costs as the new manufacturing process reaches mass production efficiency.
Exceeding JEDEC Standards
With speeds of 9,200 MT/s, these new DDR5 chips significantly surpass the current JEDEC-defined DDR5 standards. Micron states that while the chips can operate at JEDEC-approved speeds, their additional overclocking headroom ensures future compatibility with upcoming processors and enables their use in high-performance memory modules for enthusiasts.
CUDIMM & CXL Module Compatibility
Micron also suggests that these new high-speed DDR5 modules can be used in CUDIMM or CXL-based memory solutions, further expanding their potential for cutting-edge computing applications beyond standard JEDEC specifications.
How does 1γ technology work?
The 1γ (1-gamma) process represents Micron’s sixth generation of 10nm-class DRAM technology, with its most significant breakthrough being the adoption of Extreme Ultraviolet (EUV) lithography—a first for the company in memory production.
While Micron has not disclosed the exact number of EUV layers used, it is likely applied to critical steps that previously required multiple exposures with conventional Deep Ultraviolet (DUV) lithography. This transition reduces manufacturing steps, leading to higher yields and lower production costs.
In addition to EUV lithography, Micron’s 1γ technology incorporates several cutting-edge advancements:
- High-K Metal Gate (HKMG) Transistors – Enhances performance and energy efficiency.
- Optimized Circuit Design – Increases memory density and lowers power consumption.
- Advanced Etching Techniques – Improves precision in microfabrication.
- New Back-End-of-Line (BEOL) Circuitry – Enhances signal integrity and performance.
Performance & Efficiency Gains
The integration of these technologies enables DDR5 speeds of 9,200 MT/s—a 15% improvement over the previous generation—while also reducing power consumption by 20%.
Although Micron is late to adopt EUV lithography, this shift should help the company close the gap with competitors like Samsung and SK Hynix, who have been using EUV for years. Until now, Micron has remained competitive by relying on advanced DUV lithography with multiple exposures—but this new transition signals a major step forward in efficiency and density improvements.
When will the new Micron memories be released?
Micron has begun shipping samples of its new DDR5-9200 memory to key partners and select customers. The company expects the chip qualification process to take about six months, meaning these high-speed modules could start appearing in consumer products by mid-2025.
At first, these next-gen memory chips will likely be used in high-performance servers and premium laptops, where energy efficiency is a top priority. Micron also anticipates that enthusiast-grade memory modules could push speeds beyond 10,000 MT/s, offering even greater performance.
Looking ahead, Micron plans to expand the use of its 1γ (1-gamma) manufacturing process to produce other types of advanced memory, including:
- GDDR7 – Next-gen graphics memory for GPUs
- LPDDR5X – Power-efficient RAM for smartphones and mobile devices
- Data Center-Specific DRAM – Optimized for enterprise and AI applications
Like most cutting-edge technology, early pricing for DDR5-9200 will be on the higher side, making it more accessible to enterprise and high-end markets first. However, as production ramps up and efficiency improves, prices should gradually become more affordable in 2025 and 2026, making this powerful memory available to a wider audience.
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